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  october 2010 doc id 18063 rev 1 1/16 16 std9nm60n stf9nm60n, STP9NM60N n-channel 600 v, 0.63 , 6.5 a to-220, to-220fp, dpak mdmesh? ii power mosfet features 100% avalanche tested low input capacitance and gate charge low gate input resistance application switching applications description this series of devices is realized with the second generation of mdmesh? technology. this revolutionary power mosfet associates a new vertical structure to the company?s strip layout to yield one of the world?s lowest on-resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. figure 1. internal schematic diagram order codes v dss (@tjmax) r ds(on) max. i d std9nm60n 650 v < 0.745 6.5 a stf9nm60n STP9NM60N 1 2 3 1 2 3 to-220fp to-220 dpak 1 3 !-v $ ' 3 table 1. device summary order codes marking packages packaging std9nm60n 9nm60n dpak tape and reel stf9nm60n to-220fp tube STP9NM60N to-220 www.st.com
contents std9nm60n, stf9nm60n, STP9NM60N 2/16 doc id 18063 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
std9nm60n, stf9nm60n, STP9NM60N electrical ratings doc id 18063 rev 1 3/16 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220, dpak to-220fp v ds drain-source voltage (v gs = 0) 600 v v gs gate- source voltage 25 v i d drain current (continuous) at t c = 25 c 6.5 6.5 (1) 1. limited only by maximum temperature allowed a i d drain current (continuous) at t c = 100 c 4 4 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 26 26 (1) a p tot total dissipation at t c = 25 c 70 25 w v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s;t c =25 c) 2500 v dv/dt (3) 3. i sd 6.5 a, di/dt 400 a/s, v dd = 80% v (br)dss peak diode recovery voltage slope 15 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit dpak to-220 to-220fp r thj-case thermal resistance junction-case max 1.79 5 c/w r thj-pcb (1) 1. when mounted on 1inch2 fr-4 board, 2 oz cu thermal resistance junction-pcb minimum footprint 50 c/w r thj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by tj max) 2.5 a e as single pulse avalanche energy (starting tj = 25 c, i d = i ar , v dd = 50 v) 115 mj
electrical characteristics std9nm60n, stf9nm60n, STP9NM60N 4/16 doc id 18063 rev 1 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, @125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 3.25 a 0.63 0.745 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 452 30 1.45 - pf pf pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capac itance giving the same charging time as c oss when v ds increases from 0 to 80% v ds . equivalent output catacitance v gs = 0, v ds = 0 to 480 v - 79 - pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480 v, i d = 6.5 a, v gs = 10 v, (see figure 18) - 17.4 3 9.7 - nc nc nc r g gate input resistance f=1 mhz gate dc bias=0 test signal level=20 mv open drain -4.8 -
std9nm60n, stf9nm60n, STP9NM60N electrical characteristics doc id 18063 rev 1 5/16 table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f tu r n - o n d e l ay t i m e rise time turn-off delay time fall time v dd = 480 v, i d = 6.5 a r g =4.7 v gs = 10 v (see figure 17) - 28 23 52.5 26.7 - ns ns ns ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 6.5 26 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 6.5 a, v gs = 0 - 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 6.5 a, di/dt = 100 a/s v dd = 60 v (see figure 22) - 264 1.9 14.6 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 6.5 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 22) - 324 2.3 14.2 ns c a
electrical characteristics std9nm60n, stf9nm60n, STP9NM60N 6/16 doc id 18063 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area for to-220 figure 3. thermal impedance for to-220 figure 4. safe operating area for dpak figure 5. thermal impedance for dpak figure 6. safe operating area for to-220fp figure 7. thermal impedance for to-220fp i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e 0.01 am0 8 162v1 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e 0.01 am0 8 16 3 v1 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e 0.01 am0 8 164v1
std9nm60n, stf9nm60n, STP9NM60N electrical characteristics doc id 18063 rev 1 7/16 figure 8. output characteristics figure 9. transfer characteristics figure 10. gate charge vs gate-source voltage figure 11. static drain-source on resistance figure 12. capacitance variations figure 13. output capacitance stored energy i d 6 4 2 0 0 10 v d s (v) 20 (a) 5 15 25 8 10 5v 6v v g s =10v 3 0 12 am0 8 165v1 i d 6 4 2 0 0 4 v g s (v) 8 (a) 2 6 10 8 10 12 v d s =20v am0 8 166v1 v g s 6 4 2 0 0 5 q g (nc) (v) 20 8 10 15 10 v dd =4 8 0v i d =6.5a 12 3 00 200 100 0 400 500 v d s v g s am0 8 167v1 r d s (on) 0.62 0.61 0.60 0.59 0 2 i d (a) ( ) 1 3 0.6 3 0.64 0.65 0.66 v g s =10v 5 4 6 am0 8 16 8 v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 100 ci ss co ss cr ss am0 8 169v1 e o ss 1.5 1 0.5 0 0 100 v d s (v) ( j) 400 2 200 3 00 2.5 3 500 600 3 .5 am0 8 170v1
electrical characteristics std9nm60n, stf9nm60n, STP9NM60N 8/16 doc id 18063 rev 1 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on resistance vs temperature figure 16. normalized b vdss vs temperature v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 am0 8 171v1 r d s (on) 1.9 1.5 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 i d = 3 .25a 0.7 1.1 1. 3 1.7 2.1 am0 8 172v1 bv d ss -50 0 t j (c) (norm) -25 75 25 50 100 0.9 3 0.95 0.97 0.99 1.01 1.0 3 1.05 1.07 i d =1ma am0 8 17 3 v1
std9nm60n, stf9nm60n, STP9NM60N test circuits doc id 18063 rev 1 9/16 3 test circuits figure 17. switching times test circuit for resistive load figure 18. gate charge test circuit figure 19. test circuit for inductive load switching and diode recovery times figure 20. unclamped inductive load test circuit figure 21. unclamped inductive waveform figure 22. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
package mechanical data std9nm60n, stf9nm60n, STP9NM60N 10/16 doc id 18063 rev 1 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
std9nm60n, stf9nm60n, STP9NM60N package mechanical data doc id 18063 rev 1 11/16 figure 23. to-220fp drawing table 9. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2 7012510_rev_k a b h di a l7 d e l6 l5 l2 l 3 l4 f1 f2 f g g1
package mechanical data std9nm60n, stf9nm60n, STP9NM60N 12/16 doc id 18063 rev 1 to-220 type a mechanical data dim mm min typ max a 4.40 4.60 b 0.61 0. 88 b 1 1.14 1.70 c0.4 8 0.70 d 15.25 15.75 d1 1.27 e10 10.40 e 2.40 2.70 e1 4. 9 5 5.15 f1.2 3 1. 3 2 h1 6.20 6.60 j1 2.40 2.72 l1 3 14 l1 3 .50 3 . 93 l20 16.40 l 3 02 8 . 9 0 ? p 3 .75 3 . 8 5 q 2.65 2. 9 5 0015988_rev_s
std9nm60n, stf9nm60n, STP9NM60N package mechanical data doc id 18063 rev 1 13/16 dim. mm. . x a m p y t . n i m 0 4 . 2 0 2 . 2 a 0 1 . 1 0 9 . 0 1 a 3 2 . 0 3 0 . 0 2 a 0 9 . 0 4 6 . 0 b 0 4 . 5 0 2 . 5 4 b 0 6 . 0 5 4 . 0 c 0 6 . 0 8 4 . 0 2 c 0 2 . 6 0 0 . 6 d 0 1 . 5 1 d 0 6 . 6 0 4 . 6 e 0 7 . 4 1 e 8 2 . 2 e 0 6 . 4 0 4 . 4 1 e 0 1 . 0 1 5 3 . 9 h 1 l 0 8 . 2 1 l 0 8 . 0 2 l 1 0 6 . 0 4 l 0 2 . 0 r v2 0 o 8 o to-252 (dpak) mechanical data 006 8 772_g
package mechanical data std9nm60n, stf9nm60n, STP9NM60N 14/16 doc id 18063 rev 1 5 package mechanical data tape and reel shipment dpak footprint dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 16.4 18.4 0.645 0.724 n 50 1.968 t 22.4 0.881 base qty bulk qty 2500 2500 reel mechanical data dim. mm inch min. max. min. max. a0 6.8 7 0.267 0.275 b0 10.4 10.6 0.409 0.417 b1 12.1 0.476 d 1.5 1.6 0.059 0.063 d1 1.5 0.059 e 1.65 1.85 0.065 0.073 f 7.4 7.6 0.291 0.299 k0 2.55 2.75 0.100 0.108 p0 3.9 4.1 0.153 0.161 p1 7.9 8.1 0.311 0.319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions are in millimeters
std9nm60n, stf9nm60n, STP9NM60N revision history doc id 18063 rev 1 15/16 6 revision history table 10. document revision history date revision changes 20-oct-2010 1 first release.
std9nm60n, stf9nm60n, STP9NM60N 16/16 doc id 18063 rev 1 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2010 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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